DIODE GEN PURP 600V 200A WAFER SIDC81D60E6X1SA3
The pictures are for reference only
Description:
DIODE GEN PURP 600V 200A WAFER
Contact Us
Parameters
Capacitance at different Vr and F
Current - reverse leakage at different Vr
Current average rectification (Io)
Reverse recovery time (trr)
Standard recovery>500ns,> 200mA(Io)
Supplier device packaging
Voltage DC reverse (Vr) (maximum)
Voltage at different If - forward (Vf)
DataSheet
SIDC81D60E6X1SA3(Diode rectifier)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory36864,Price reference "real-time change" China/Hongkong。 SIDC81D60E6X1SA3 package/specs, Download SIDC81D60E6X1SA3、Datasheet。